High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
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چکیده
منابع مشابه
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.
High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the abs...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2011
ISSN: 1094-4087
DOI: 10.1364/oe.19.023341